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Other articles related with "contact resistance"：
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27304 |
Shu-Xing Zhou(周书星), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Huai Xu(徐安怀), Jia-Sheng Yan(颜家圣), Shu-Sen Li(李树森), and Zhi Jin(金智) |
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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing |
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Chin. Phys. B
2021 Vol.30 (2): 27304-0
[Abstract]
(368)
[HTML 1 KB]
[PDF 615 KB]
(74)
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114401 |
Huilong Yan(闫慧龙), Jinliang Yan(闫金良), Gang Zhao(赵刚) |
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Heat transfer of liquid metal alloy on copper plate deposited with film of different surface free energy |
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Chin. Phys. B
2019 Vol.28 (11): 114401-114401
[Abstract]
(717)
[HTML 1 KB]
[PDF 661 KB]
(175)
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118501 |
M Micjan, M Novota, P Telek, M Donoval, M Weis |
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Hunting down the ohmic contact of organic field-effect transistor |
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Chin. Phys. B
2019 Vol.28 (11): 118501-118501
[Abstract]
(564)
[HTML 1 KB]
[PDF 579 KB]
(115)
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37305 |
Pan Dai(代盼), Jianya Lu(卢建娅), Ming Tan(谭明), Qingsong Wang(王青松), Yuanyuan Wu(吴渊渊), Lian Ji(季莲), Lifeng Bian(边历峰), Shulong Lu(陆书龙), Hui Yang(杨辉) |
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Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell |
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Chin. Phys. B
2017 Vol.26 (3): 37305-037305
[Abstract]
(874)
[HTML 1 KB]
[PDF 327 KB]
(555)
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118101 |
Shu-Zhen Yu(于淑珍), Yan Song(宋焱), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Yong-Ming Zhao(赵勇明), Yang He(何洋) |
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Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process |
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Chin. Phys. B
2016 Vol.25 (11): 118101-118101
[Abstract]
(666)
[HTML 0 KB]
[PDF 438 KB]
(379)
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78103 |
Da-cheng Mao(毛达诚), Zhi Jin(金智), Shao-qing Wang(王少青), Da-yong Zhang(张大勇), Jing-yuan Shi(史敬元), Song-ang Peng(彭松昂), Xuan-yun Wang(王选芸) |
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Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance |
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Chin. Phys. B
2016 Vol.25 (7): 78103-078103
[Abstract]
(649)
[HTML 1 KB]
[PDF 1257 KB]
(352)
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57306 |
Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy |
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Chin. Phys. B
2016 Vol.25 (5): 57306-057306
[Abstract]
(697)
[HTML 1 KB]
[PDF 654 KB]
(564)
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76601 |
Li Rui (李睿), Guo Chun-Sheng (郭春生), Feng Shi-Wei (冯士维), Shi Lei (石磊), Zhu Hui (朱慧), Wang Lin (王琳) |
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Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor |
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Chin. Phys. B
2015 Vol.24 (7): 76601-076601
[Abstract]
(546)
[HTML 1 KB]
[PDF 238 KB]
(344)
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98502 |
Wu Shuang-Hong (吴双红), Ryosuke Nakamichi, Masatsugu Taneda, Zhang Qi-Sheng (张其胜), Chihaya Adachi |
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Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene |
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Chin. Phys. B
2014 Vol.23 (9): 98502-098502
[Abstract]
(906)
[HTML 1 KB]
[PDF 229 KB]
(588)
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66803 |
Dai Chong-Chong (代冲冲), Liu Xue-Chao (刘学超), Zhou Tian-Yu (周天宇), Zhuo Shi-Yi (卓世异), Shi Biao (石彪), Shi Er-Wei (施尔畏) |
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Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC |
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Chin. Phys. B
2014 Vol.23 (6): 66803-066803
[Abstract]
(532)
[HTML 1 KB]
[PDF 717 KB]
(322)
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117307 |
Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 ) |
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Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer |
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Chin. Phys. B
2012 Vol.21 (11): 117307-117307
[Abstract]
(1038)
[HTML 1 KB]
[PDF 410 KB]
(723)
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88103 |
Wei Qin-Qin (魏芹芹), Wei Zi-Jun (魏子钧), Ren Li-Ming (任黎明), Zhao Hua-Bo (赵华波), Ye Tian-Yang (叶天扬), Shi Zu-Jin (施祖进), Fu Yun-Yi (傅云义), Zhang Xing (张兴), Huang Ru (黄如) |
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Vertical assembly of carbon nanotubes for via interconnects |
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Chin. Phys. B
2012 Vol.21 (8): 88103-088103
[Abstract]
(1329)
[HTML 1 KB]
[PDF 13760 KB]
(750)
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47205 |
Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇) |
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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes |
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Chin. Phys. B
2010 Vol.19 (4): 47205-047205
[Abstract]
(1526)
[HTML 1 KB]
[PDF 459 KB]
(1784)
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2142 |
Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation |
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Chin. Phys. B
2006 Vol.15 (9): 2142-2145
[Abstract]
(1127)
[HTML 1 KB]
[PDF 262 KB]
(726)
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